Femtosecond kinetics of reflection of mirrors with saturable absorption
- Autores: Borisov G.M.1,2, Gol’dort V.G.1, Kovalyov A.A.1, Ledovskikh D.V.1, Rubtsova N.N.1
- 
							Afiliações: 
							- Rzhanov Institute of Semiconductor Physics, Siberian branch
- Novosibirsk State University
 
- Edição: Volume 52, Nº 2 (2016)
- Páginas: 148-152
- Seção: Optical Information Technologies
- URL: https://journals.rcsi.science/8756-6990/article/view/211931
- DOI: https://doi.org/10.3103/S8756699016020060
- ID: 211931
Citar
Resumo
The kinetics of mirrors with saturable absorption is investigated by a pump-probe singlefrequency technique in reflection of femtosecond pulse radiation with the central wavelength of 1040 nm. The double modulation method with probe radiation detection at the summary frequency allows suppressing the scattered pump radiation contribution and reaching the reflection change sensitivity at a level of 10−5. The kinetics of recovery of the linear reflectivity of the mirror including resonant quantum wells with nanostructured barriers is studied for the surface density of photons in pump pulses of (0.3–5.8) · 1014 cm−2. The time of electron-hole recombination (7.8 ps) is found to be appreciably shorter than in samples with quantum wells separated by thick barriers; the time of ionization of excitons localized in quantum wells (0.2–0.4 ps) increases with the pump intensity.
Palavras-chave
Sobre autores
G. Borisov
Rzhanov Institute of Semiconductor Physics, Siberian branch; Novosibirsk State University
														Email: rubtsova@isp.nsc.ru
				                					                																			                												                	Rússia, 							pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090						
V. Gol’dort
Rzhanov Institute of Semiconductor Physics, Siberian branch
														Email: rubtsova@isp.nsc.ru
				                					                																			                												                	Rússia, 							pr. Akademika Lavrent’eva 13, Novosibirsk, 630090						
A. Kovalyov
Rzhanov Institute of Semiconductor Physics, Siberian branch
														Email: rubtsova@isp.nsc.ru
				                					                																			                												                	Rússia, 							pr. Akademika Lavrent’eva 13, Novosibirsk, 630090						
D. Ledovskikh
Rzhanov Institute of Semiconductor Physics, Siberian branch
														Email: rubtsova@isp.nsc.ru
				                					                																			                												                	Rússia, 							pr. Akademika Lavrent’eva 13, Novosibirsk, 630090						
N. Rubtsova
Rzhanov Institute of Semiconductor Physics, Siberian branch
							Autor responsável pela correspondência
							Email: rubtsova@isp.nsc.ru
				                					                																			                												                	Rússia, 							pr. Akademika Lavrent’eva 13, Novosibirsk, 630090						
Arquivos suplementares
 
				
			 
						 
						 
						 
						 
					 
				 
  
  
  
  
  Enviar artigo por via de e-mail
			Enviar artigo por via de e-mail  Acesso aberto
		                                Acesso aberto Acesso está concedido
						Acesso está concedido Somente assinantes
		                                		                                        Somente assinantes
		                                					