Terahertz Response from a Silicon Surface with Deposited Nanosized Gold Particles
- Autores: Sinko A.S.1,2, Moldosanov K.A.3, Solyankin P.M.1, Ozheredov I.A.1,2, Shkurinov A.P.1,2
- 
							Afiliações: 
							- Institute on Laser and Information Technologies - Branch of the Federal Scientific Research Center “Crystallography and Photonics”
- Lomonosov Moscow State University
- Kyrgyz-Russian Slavic University
 
- Edição: Volume 55, Nº 5 (2019)
- Páginas: 468-473
- Seção: Nanotechnologies in Optics and Electronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212858
- DOI: https://doi.org/10.3103/S875669901905008X
- ID: 212858
Citar
Resumo
Terahertz emission spectra of the surface of silicon crystals with different types of conductivity were experimentally recorded upon excitation by femtosecond laser pulses at various temperatures. The observed features in the terahertz spectra of the silicon surface correspond to the energy structure of the impurity centers determining the type of conductivity of the sample. Comparison was made with the results obtained in the case of deposition of gold nanoparticles on a semiconductor surface. The spectral features of the surface with deposited nanoparticles are discussed using the terahertz re-emission mechanism in two-phonon absorption.
Palavras-chave
Sobre autores
A. Sinko
Institute on Laser and Information Technologies - Branch of the Federal Scientific Research Center “Crystallography and Photonics”; Lomonosov Moscow State University
							Autor responsável pela correspondência
							Email: Sinko-260395@mail.ru
				                					                																			                												                	Rússia, 							ul. Svyatoozerskaya 1, Shatura, Moscow Region, 140700; Leninskie Gory 1, Moscow, 119992						
K. Moldosanov
Kyrgyz-Russian Slavic University
														Email: Sinko-260395@mail.ru
				                					                																			                												                	Киргизия, 							ul. Kievskaya 44, Bishkek, 720000						
P. Solyankin
Institute on Laser and Information Technologies - Branch of the Federal Scientific Research Center “Crystallography and Photonics”
														Email: Sinko-260395@mail.ru
				                					                																			                												                	Rússia, 							ul. Svyatoozerskaya 1, Shatura, Moscow Region, 140700						
I. Ozheredov
Institute on Laser and Information Technologies - Branch of the Federal Scientific Research Center “Crystallography and Photonics”; Lomonosov Moscow State University
														Email: Sinko-260395@mail.ru
				                					                																			                												                	Rússia, 							ul. Svyatoozerskaya 1, Shatura, Moscow Region, 140700; Leninskie Gory 1, Moscow, 119992						
A. Shkurinov
Institute on Laser and Information Technologies - Branch of the Federal Scientific Research Center “Crystallography and Photonics”; Lomonosov Moscow State University
														Email: Sinko-260395@mail.ru
				                					                																			                												                	Rússia, 							ul. Svyatoozerskaya 1, Shatura, Moscow Region, 140700; Leninskie Gory 1, Moscow, 119992						
Arquivos suplementares
 
				
			 
						 
						 
						 
						 
					 
				 
  
  
  
  
  Enviar artigo por via de e-mail
			Enviar artigo por via de e-mail  Acesso aberto
		                                Acesso aberto Acesso está concedido
						Acesso está concedido Somente assinantes
		                                		                                        Somente assinantes
		                                					