Stretch Vibrations of CH2 as a Measure of Conformational and Lateral Orders in Fatty Acid and Phospholipid Layers
- Авторлар: Adishchev S.V.1, Duda T.A.2, Zaitseva Y.V.1,3, Zykova V.A.1, Milekhin A.G.2, Okotrub K.A.1, Surovtsev N.V.1,3
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Мекемелер:
- Institute of Automation and Electrometry, Siberian Branch
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Шығарылым: Том 54, № 6 (2018)
- Беттер: 538-545
- Бөлім: Optical Information Technologies
- URL: https://journals.rcsi.science/8756-6990/article/view/212600
- DOI: https://doi.org/10.3103/S875669901806002X
- ID: 212600
Дәйексөз келтіру
Аннотация
The intensity of the line of antisymmetric vibrations of CH2 in the Raman spectrum of molecular layers of fatty acids and phospholipids is sensitive both to the molecular order in the layer (lateral order) and to the conformational order of the hydrocarbon chain of the molecule. Though the intensity of this line is widely used as an indicator of order in molecular layers containing hydrocarbon tails, the nature of sensitivity of the line of antisymmetric vibrations to the order is still disputable. This issue has been experimentally studied, and it has been demonstrated that disordering leads to redistribution of vibrational modes and to changes in polarizability of antisymmetric vibrations. A hypothesis is proposed that the intensity of the line of the Raman scattering of antisymmetric vibrations of CH2 is determined to a large extent by their interaction with electron excitation of the hydrocarbon chain.
Негізгі сөздер
Авторлар туралы
S. Adishchev
Institute of Automation and Electrometry, Siberian Branch
Email: lab21@iae.nsk.su
Ресей, pr. Akademika Koptyuga 1, Novosibirsk, 630090
T. Duda
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: lab21@iae.nsk.su
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
Yu. Zaitseva
Institute of Automation and Electrometry, Siberian Branch; Novosibirsk State University
Email: lab21@iae.nsk.su
Ресей, pr. Akademika Koptyuga 1, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
V. Zykova
Institute of Automation and Electrometry, Siberian Branch
Email: lab21@iae.nsk.su
Ресей, pr. Akademika Koptyuga 1, Novosibirsk, 630090
A. Milekhin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: lab21@iae.nsk.su
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
K. Okotrub
Institute of Automation and Electrometry, Siberian Branch
Email: lab21@iae.nsk.su
Ресей, pr. Akademika Koptyuga 1, Novosibirsk, 630090
N. Surovtsev
Institute of Automation and Electrometry, Siberian Branch; Novosibirsk State University
Хат алмасуға жауапты Автор.
Email: lab21@iae.nsk.su
Ресей, pr. Akademika Koptyuga 1, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
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