Stochastic simulation of electron-hole recombination in two-dimensional and three-dimensional inhomogeneous semiconductors. Part II. Simulation results

Аннотация

This paper describes the stochastic models of electron-hole recombination in inhomogeneous semiconductors in two-dimensional and three-dimensional cases, which were developed on the basis of discrete (cellular automaton) and continuous (Monte Carlo method) approaches. The particle recombination kinetics in pure diffusion and diffusion with tunneling is studied. There is a certain difference revealed between the behavior of electron-hole spatial correlations calculated by discrete and continuous models and the nature of segregation formation in three-dimensional semiconductors associated with that behavior. The comparative analysis of the simulation characteristics determined via cellular automaton and continuous recombination models is carried out.