Germanium-based metal-insulator-semiconductor transistors as a direction for the further development of CMOS technology

Abstract

The possibility of improving the performance of semiconductor integrated circuits by replacing the silicon layer in metal–insulator–semiconductor (MIS) transistors by a material with higher charge-carrier mobility. It is shown that germanium is best suited for this purpose based on its properties. Developments made in this area in different laboratories both in Russia and abroad are discussed.