Monte Carlo Simulation of Charge Carrier Diffusion for Determining the Spatial Resolution of Infrared Cadmium—Mercury—Tellurium Detectors

A. V. Vishnyakov; V. V. Vasiliev; I. V. Sabinina; G. Yu. Sidorov; V. A. Stuchinsky

doi:10.3103/S8756699019050169

Monte Carlo Simulation of Charge Carrier Diffusion for Determining the Spatial Resolution of Infrared Cadmium—Mercury—Tellurium Detectors

作者: Vishnyakov A.V.¹, Vasiliev V.V.¹, Sabinina I.V.¹, Sidorov G.Y.¹, Stuchinsky V.A.¹
隶属关系:
1. Rzhanov Institute of Semiconductor Physics, Siberian Branch
期: 卷 55, 编号 5 (2019)
页面: 519-524
栏目: Modeling in Physical and Technical Research
URL: https://journals.rcsi.science/8756-6990/article/view/212891
DOI: https://doi.org/10.3103/S8756699019050169
ID: 212891

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详细

Diffusion of charge carriers in the photosensitive film of infrared mercury—cadmium—tellurium (MCT) focal plane arrays (FPAs) is simulated by the Monte Carlo method for determining the spatial resolution of these FPAs. Calculation results for matrix and linear FPAs with variously designed FPA pixels, including configurations with isolating diodes, are reported. The calculated data are compared with the experimentally measured resolution values of real FPAs.