Molecular beam epitaxy of BaF2/CaF2 buffer layers on the Si(100) substrate for monolithic photoreceivers

Аннотация

This paper describes the study of the surface morphology of BaF2 epitaxial films grown by means of molecular beam epitaxy in various growth regimes on a CaF₂/Si(100) surface, which is performed by means of atomic force microscopy. The CaF₂ layers were obtained on a Si(100) substrate in a low-temperature growth regime (T_s = 500 °C). The technological regimes of growth of BaF₂ continuous films with a smooth surface on CaF₂/Si(100), suitable as buffer layers for the subsequent growth of PbSnTe layers or other semiconductors, such as A₄B₆, and solid solutions based on them.