Cell of the silicon integrated reading circuit with built-it analog-digital converter

Abstract

This paper describes the project of an accumulative cell of a silicon integrated signal reading circuit with a built-in analog-digital converter for matrix IR photodetectors based on the Hg_1-xCd_xTe solid solutions with the sensitivity in the spectral range from 8 to 10 µm. The cell is designed according to the silicon technology HCMOS8D of JSC “NIIME i Mikron” (Moscow) with a project norm of 0.18 µm. The presented project of the cell has the size of 20×2020 µm, and the number of bits in the built-in analog-digital converter is 15. When the average photocurrent is 7 nA and the integration time is 7.5 ms, the estimated value of the noise equivalent delta temperature is 4.6 mK.