Author Details
Neizvestny, I. G.
| Issue | Section | Title | File |
| Vol 52, No 5 (2016) | Physical and Engineering Fundamentals of Microelectronics and Optoelectronics | Germanium-based metal-insulator-semiconductor transistors as a direction for the further development of CMOS technology | |
| Vol 52, No 5 (2016) | Optical Information Technologies | Three-spectrum multielement photodetector device | |
| Vol 52, No 5 (2016) | Optical Information Technologies | Quantum key distribution in single-photon communication system | |
| Vol 52, No 5 (2016) | Nanotechnologies in Optics and Electronics | Formation of silicon nanocrystals in Si—SiO2—α-Si—SiO2 heterostructures during high-temperature annealing: Experiment and simulation | |
| Vol 52, No 5 (2016) | Nanotechnologies in Optics and Electronics | Raman studies of phase and atomic compositions of GeSi nanosystems after pulsed annealing | |
| Vol 52, No 5 (2016) | Nanotechnologies in Optics and Electronics | Monte Carlo simulation of the formation of AIIIBV nanostructures with the use of droplet epitaxy |