Monte Carlo simulation of the formation of AIIIBV nanostructures with the use of droplet epitaxy


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Аннотация

A Monte Carlo lattice model is proposed to describe the formation of semiconductor nanostructures by the vapor–liquid–solid growth mechanism. This model is used to simulate the growth of GaAs nanostructures by the droplet epitaxy technique in the temperature range from 500 to 600 K in As2 fluxes with intensity of 0.005–0.04 ML/s. The morphology of the formed structures is demonstrated to depend on the growth parameters. Etching of the GaAs substrate by a gallium droplet is studied. The ranges of temperature and As flux rates necessary for the formation of GaAs nanorings are determined. The conditions of the formation of single and double concentric rings are analyzed.

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Авторлар туралы

M. Vasilenko

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State Technical University

Email: alla@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; pr. Karla Marksa 20, Novosibirsk, 630073

A. Nastovjak

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Хат алмасуға жауапты Автор.
Email: alla@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

I. Neizvestny

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State Technical University

Email: alla@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; pr. Karla Marksa 20, Novosibirsk, 630073

N. Shwartz

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State Technical University

Email: alla@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; pr. Karla Marksa 20, Novosibirsk, 630073

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© Allerton Press, Inc., 2016