Monte Carlo simulation of the formation of AIIIBV nanostructures with the use of droplet epitaxy
- Authors: Vasilenko M.A.1,2, Nastovjak A.G.1, Neizvestny I.G.1,2, Shwartz N.L.1,2
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State Technical University
- Issue: Vol 52, No 5 (2016)
- Pages: 508-517
- Section: Nanotechnologies in Optics and Electronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212017
- DOI: https://doi.org/10.3103/S8756699016050137
- ID: 212017
Cite item
Abstract
A Monte Carlo lattice model is proposed to describe the formation of semiconductor nanostructures by the vapor–liquid–solid growth mechanism. This model is used to simulate the growth of GaAs nanostructures by the droplet epitaxy technique in the temperature range from 500 to 600 K in As2 fluxes with intensity of 0.005–0.04 ML/s. The morphology of the formed structures is demonstrated to depend on the growth parameters. Etching of the GaAs substrate by a gallium droplet is studied. The ranges of temperature and As flux rates necessary for the formation of GaAs nanorings are determined. The conditions of the formation of single and double concentric rings are analyzed.
Keywords
About the authors
M. A. Vasilenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State Technical University
Email: alla@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; pr. Karla Marksa 20, Novosibirsk, 630073
A. G. Nastovjak
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Author for correspondence.
Email: alla@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
I. G. Neizvestny
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State Technical University
Email: alla@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; pr. Karla Marksa 20, Novosibirsk, 630073
N. L. Shwartz
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State Technical University
Email: alla@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; pr. Karla Marksa 20, Novosibirsk, 630073
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