Plasmon-Enhanced Near-Field Optical Spectroscopy of Multicomponent Semiconductor Nanostructures


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Abstract

Multicomponent semiconductor nanostructures were studied by local spectral analysis based on surface-enhanced Raman scattering by semiconductor nanostructures located on the surface of an array of Au nanoclusters near the metallized tip of an atomic force microscope. In the gap between the metal nanoclusters and the tip, where a semiconductor nanostructure is located, there is a strong increase in the local electric field (hot spot), resulting in a dramatic enhancement of the Raman scattering signal. An unprecedented enhancement of the Raman scattering signal by two-dimensional (over 108 for MoS2) and zero-dimensional (106 for CdSe nanocrystals) semiconductor nanostructures was achieved. The use of the method for mapping the Raman scattering response of a multicomponent system of MoS2 and CdSe made it possible to identify components with a spatial resolution far exceeding the diffraction limit.

About the authors

M. Rahaman

Semiconductor Physics

Email: kirill_anikin@list.ru
Germany, Reichenhainer str. 70, Chemnitz, D-09107

T. A. Duda

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: kirill_anikin@list.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090

I. A. Milekhin

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Semiconductor Physics

Email: kirill_anikin@list.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; Reichenhainer str. 70, Chemnitz, D-09107

E. E. Rodyakina

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: kirill_anikin@list.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090

R. B. Vasiliev

Lomonosov Moscow State University

Email: kirill_anikin@list.ru
Russian Federation, Leninskie Gory 1, Moscow, 119991

V. M. Dzhagan

Lashkaryov Institute of Semiconductor Physics; Taras Shevchenko National University of Kyiv

Email: kirill_anikin@list.ru
Ukraine, pr. Nauki 41, Kyiv, 03028; ul. Volodymyrska 64, Kyiv, 01601

D. R. T. Zahn

Semiconductor Physics

Email: kirill_anikin@list.ru
Germany, Reichenhainer str. 70, Chemnitz, D-09107

A. V. Latyshev

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: kirill_anikin@list.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090

K. V. Anikin

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Author for correspondence.
Email: kirill_anikin@list.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090

A. G. Milekhin

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: kirill_anikin@list.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090

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