Plasmon-Enhanced Near-Field Optical Spectroscopy of Multicomponent Semiconductor Nanostructures
- Authors: Rahaman M.1, Duda T.A.2, Milekhin I.A.2,1, Rodyakina E.E.2,3, Vasiliev R.B.4, Dzhagan V.M.5,6, Zahn D.R.1, Latyshev A.V.2,3, Anikin K.V.2, Milekhin A.G.2,3
-
Affiliations:
- Semiconductor Physics
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Lomonosov Moscow State University
- Lashkaryov Institute of Semiconductor Physics
- Taras Shevchenko National University of Kyiv
- Issue: Vol 55, No 5 (2019)
- Pages: 488-494
- Section: Nanotechnologies in Optics and Electronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212867
- DOI: https://doi.org/10.3103/S875669901905011X
- ID: 212867
Cite item
Abstract
Multicomponent semiconductor nanostructures were studied by local spectral analysis based on surface-enhanced Raman scattering by semiconductor nanostructures located on the surface of an array of Au nanoclusters near the metallized tip of an atomic force microscope. In the gap between the metal nanoclusters and the tip, where a semiconductor nanostructure is located, there is a strong increase in the local electric field (hot spot), resulting in a dramatic enhancement of the Raman scattering signal. An unprecedented enhancement of the Raman scattering signal by two-dimensional (over 108 for MoS2) and zero-dimensional (106 for CdSe nanocrystals) semiconductor nanostructures was achieved. The use of the method for mapping the Raman scattering response of a multicomponent system of MoS2 and CdSe made it possible to identify components with a spatial resolution far exceeding the diffraction limit.
About the authors
M. Rahaman
Semiconductor Physics
Email: kirill_anikin@list.ru
Germany, Reichenhainer str. 70, Chemnitz, D-09107
T. A. Duda
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: kirill_anikin@list.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
I. A. Milekhin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Semiconductor Physics
Email: kirill_anikin@list.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; Reichenhainer str. 70, Chemnitz, D-09107
E. E. Rodyakina
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: kirill_anikin@list.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
R. B. Vasiliev
Lomonosov Moscow State University
Email: kirill_anikin@list.ru
Russian Federation, Leninskie Gory 1, Moscow, 119991
V. M. Dzhagan
Lashkaryov Institute of Semiconductor Physics; Taras Shevchenko National University of Kyiv
Email: kirill_anikin@list.ru
Ukraine, pr. Nauki 41, Kyiv, 03028; ul. Volodymyrska 64, Kyiv, 01601
D. R. T. Zahn
Semiconductor Physics
Email: kirill_anikin@list.ru
Germany, Reichenhainer str. 70, Chemnitz, D-09107
A. V. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: kirill_anikin@list.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
K. V. Anikin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Author for correspondence.
Email: kirill_anikin@list.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
A. G. Milekhin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: kirill_anikin@list.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
Supplementary files
