Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy


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Аннотация

This paper demonstrates the applicability of nanoindentation technique using atomic-force microscope cantilever for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case when their stiffness significantly exceeds that of the cantilever of atomic-force microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different points of the investigated structure with theoretical predictions.

Авторлар туралы

E. Zhdanov

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Хат алмасуға жауапты Автор.
Email: zhdanov@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090

A. Pogosov

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: zhdanov@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090

D. Pokhabov

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: zhdanov@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090

M. Budantsev

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: zhdanov@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

A. Kozhukhov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: zhdanov@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

A. Bakarov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: zhdanov@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

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