Spectroscopy of Single AlInAs Quantum Dots
- Autores: Derebezov I.A.1, Gaisler A.V.1, Gaisler V.A.1, Dmitriev D.V.1, Toropov A.I.1, Kozhukhov A.S.1, Shcheglov D.V.1, Latyshev A.V.1, Aseev A.L.1
-
Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Edição: Volume 54, Nº 2 (2018)
- Páginas: 168-174
- Seção: Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212406
- DOI: https://doi.org/10.3103/S8756699018020085
- ID: 212406
Citar
Resumo
A system of quantum dots based on AlxIn1−xAs/AlyGa1−yAs solid solutions is investigated. The use of AlxIn1−xAs wide-gap solid solutions as the basis of quantum dots substantially extends the spectral emission range to the short-wavelength region, including the wavelength region near 770 nm, which is of interest for the development of aerospace systems of quantum cryptography. The optical characteristics of AlxIn1−xAs single quantum dots grown by the Stranski–Krastanov mechanism were studied by cryogenic microphotoluminescence. The statistics of the emission of single quantum dot excitons was studied using a Hanbury Brown–Twiss interferometer. The pair photon correlation function indicates the sub-Poissonian nature of the emission statistics, which directly confirms the possibility of developing single-photon emitters based on AlxIn1−xAs quantum dots. The fine structure of quantum dot exciton states was investigated at wavelengths near 770 nm. The splitting of the exciton states is found to be similar to the natural width of exciton lines, which is of great interest for the development of entangled photon pair emitters based on AlxIn1−xAs quantum dots.
Sobre autores
I. Derebezov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Autor responsável pela correspondência
Email: derebezov@isp.nsc.ru
Rússia, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
A. Gaisler
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: derebezov@isp.nsc.ru
Rússia, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
V. Gaisler
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: derebezov@isp.nsc.ru
Rússia, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
D. Dmitriev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: derebezov@isp.nsc.ru
Rússia, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
A. Toropov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: derebezov@isp.nsc.ru
Rússia, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
A. Kozhukhov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: derebezov@isp.nsc.ru
Rússia, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
D. Shcheglov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: derebezov@isp.nsc.ru
Rússia, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
A. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: derebezov@isp.nsc.ru
Rússia, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
A. Aseev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: derebezov@isp.nsc.ru
Rússia, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
Arquivos suplementares
