Development of analog-digital readout integrated circuits for infrared focal plane arrays
- Authors: Dem’yanenko M.A.1, Kozlov A.I.1, Marchishin I.V.1, Ovsyuk V.N.1
- 
							Affiliations: 
							- Rzhanov Institute of Semiconductor Physics, Siberian Branch
 
- Issue: Vol 52, No 6 (2016)
- Pages: 630-636
- Section: Computational and Data Acquisition Systems
- URL: https://journals.rcsi.science/8756-6990/article/view/212052
- DOI: https://doi.org/10.3103/S8756699016060157
- ID: 212052
Cite item
Abstract
This paper describes the design of readout integrated circuits (ROICs) for hybrid infrared focal plane arrays (IR FPAs). This work contains the estimation of the noise equivalent temperature difference (NETD) of IR FPAs based on frame and row integration of pixel signals in the spectral ranges of 8 to 14 and 3 to 5 μm. This paper also describes the development of ROICs for IR FPAs created with the use of mercury—cadmium—telluride (MCT) photodiodes and quantum well infrared photodetectors (QWIPs). The designed ROICs ensure the use of matrix and linear photodetector chips, including those with increased dark currents, in order to produce IR FPAs with temperature resolution corresponding to the world level of array analogs.
About the authors
M. A. Dem’yanenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
														Email: kozlov@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							pr. Lavrent’eva 13, Novosibirsk, 630090						
A. I. Kozlov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
							Author for correspondence.
							Email: kozlov@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							pr. Lavrent’eva 13, Novosibirsk, 630090						
I. V. Marchishin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
														Email: kozlov@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							pr. Lavrent’eva 13, Novosibirsk, 630090						
V. N. Ovsyuk
Rzhanov Institute of Semiconductor Physics, Siberian Branch
														Email: kozlov@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							pr. Lavrent’eva 13, Novosibirsk, 630090						
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