Radiation detectors based on PbSnTe:In films, sensitive in the terahertz range of the spectrum


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This paper presents a review of studies of the photoelectric properties of PbSnTe:In films obtained by molecular beam epitaxy and photosensitive structures in the far infrared and submillimeter ranges based on these films. The parameters of photodetector arrays of this type and detectors based on doped semiconductors and superconductors are compared. One-dimensional (2×128 elements) and two-dimensional (128 × 128 elements) PbSnTe:In based arrays with a sensitivity threshold of ~22 μm and an operating temperature of T ≤ 16 K are implemented. Under background-free conditions, the noise equivalent power (NEP) was NEP ≤ 10−18 W/Hz0.5 at T = 7 K for a black body radiation source at TBB = 77 K. In the submillimeter range of the spectrum, sensitivity to laser radiation with a wavelength λ ≤ 205 μm and a value NEP ≤ 10−12 W/Hz0.5 was observed without optimization of the design of the photosensitive element and minimization of the measurement circuit noise. The directions of the development of PbSnTe:In based radiation detectors are considered..

作者简介

I. Neizvestnyi

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: klimov@thermo.isp.nsc.ru
俄罗斯联邦, prosp. Lavrent’eva 13, Novosibirsk, 630090

A. Klimov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

编辑信件的主要联系方式.
Email: klimov@thermo.isp.nsc.ru
俄罗斯联邦, prosp. Lavrent’eva 13, Novosibirsk, 630090

V. Kubarev

Budker Institute of Nuclear Physics

Email: klimov@thermo.isp.nsc.ru
俄罗斯联邦, prosp. Lavrent’eva 11, Novosibirsk, 630090

V. Shumskii

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: klimov@thermo.isp.nsc.ru
俄罗斯联邦, prosp. Lavrent’eva 13, Novosibirsk, 630090

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