电邮这篇文章 Negative differential resistance in high-power InGaN/GaN laser diode
- 作者: Shamirzaev V.T.1, Gaisler V.A.1,2, Shamirzaev T.S.2,3
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隶属关系:
- Novosibirsk State Technical University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Ural Federal University
- 期: 卷 52, 编号 5 (2016)
- 页面: 442-446
- 栏目: Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
- URL: https://journals.rcsi.science/8756-6990/article/view/211999
- DOI: https://doi.org/10.3103/S8756699016050058
- ID: 211999
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详细
Negative differential resistance in InGaN/GaN ultraviolet laser diodes is demonstrated. Switching between the lower and upper branches of the S-shaped current-voltage characteristic leads to a change in the optical emission power by six orders of magnitude as the current increases from 3 to 15 mA. The occurrence of a negative differential resistance is explained by superlinear injection of charge carriers of the same sign into the high-resistance InGaN quantum well.
作者简介
V. Shamirzaev
Novosibirsk State Technical University
Email: tim@isp.nsc.ru
俄罗斯联邦, pr. Karla Marksa 20, Novosibirsk, 630073
V. Gaisler
Novosibirsk State Technical University; Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: tim@isp.nsc.ru
俄罗斯联邦, pr. Karla Marksa 20, Novosibirsk, 630073; pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
T. Shamirzaev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Ural Federal University
编辑信件的主要联系方式.
Email: tim@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Mira 19, Ekaterinburg, 620002
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