QUANTIZATION OF ELECTRICAL CONDUCTANCE IN LAYERED Zr/ZrO 2 /Au MEMRISTIVE STRUCTURES

A. S. Vokhmintsev; Вохминцев А. С.; I. A. Petrenyov; Петренёв И. А.; R. V. Kamalov; Камалов Р. В.; M. S. Karabanalov; Карабаналов М. С.; I. A. Weinstein; Вайнштейн И. А.; A. A. Rempel; Ремпель А. А.

doi:10.31857/S2686953523600034

QUANTIZATION OF ELECTRICAL CONDUCTANCE IN LAYERED Zr/ZrO₂/Au MEMRISTIVE STRUCTURES

Authors: Vokhmintsev A.S.¹, Petrenyov I.A.¹, Kamalov R.V.¹, Karabanalov M.S.¹, Weinstein .A.¹^,2, Rempel A.A.¹^,2
Affiliations:
1. NANOTECH Centre, Ural Federal University
2. Institute of Metallurgy, Ural Branch of the Russian Academy of Sciences
Issue: Vol 513, No 1 (2023)
Pages: 119-124
Section: ФИЗИЧЕСКАЯ ХИМИЯ
URL: https://journals.rcsi.science/2686-9535/article/view/252502
DOI: https://doi.org/10.31857/S2686953523600034
EDN: https://elibrary.ru/BIOFNP
ID: 252502

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Abstract
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Abstract

Anodic zirconia nanotubes are a promising functional medium for the formation of non-volatile resistive memory cells. The current-voltage characteristics in the region of low conductivity of the fabricated Zr/ZrO₂/Au memristor structures have been studied in this work. For the first time, the reversible mechanisms of formation/destruction of single quantum conductors based on oxygen vacancies, which participate in processes of multiple resistive switching between low- and high-resistance states in a nanotubular dioxide layer, have been analyzed. An equivalent electrical circuit of a parallel resistor connection have been proposed and discussed to describe the observed memristive behavior of the studied layered structures.

Keywords

nanotubular metal dioxides, zirconia nanotubes, memristors, memristive behavior, conductance quantization

References

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