QUANTIZATION OF ELECTRICAL CONDUCTANCE IN LAYERED Zr/ZrO 2 /Au MEMRISTIVE STRUCTURES

A. S. Vokhmintsev; Вохминцев А. С.; I. A. Petrenyov; Петренёв И. А.; R. V. Kamalov; Камалов Р. В.; M. S. Karabanalov; Карабаналов М. С.; I. A. Weinstein; Вайнштейн И. А.; A. A. Rempel; Ремпель А. А.

doi:10.31857/S2686953523600034

QUANTIZATION OF ELECTRICAL CONDUCTANCE IN LAYERED Zr/ZrO₂/Au MEMRISTIVE STRUCTURES

Авторлар: Vokhmintsev A.¹, Petrenyov I.¹, Kamalov R.¹, Karabanalov M.¹, Weinstein .¹^,2, Rempel A.¹^,2
Мекемелер:
1. NANOTECH Centre, Ural Federal University
2. Institute of Metallurgy, Ural Branch of the Russian Academy of Sciences
Шығарылым: Том 513, № 1 (2023)
Беттер: 119-124
Бөлім: ФИЗИЧЕСКАЯ ХИМИЯ
URL: https://journals.rcsi.science/2686-9535/article/view/252502
DOI: https://doi.org/10.31857/S2686953523600034
EDN: https://elibrary.ru/BIOFNP
ID: 252502

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат
Рұқсат жабық

Рұқсат берілді
Рұқсат жабық

Тек жазылушылар үшін

Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

Anodic zirconia nanotubes are a promising functional medium for the formation of non-volatile resistive memory cells. The current-voltage characteristics in the region of low conductivity of the fabricated Zr/ZrO₂/Au memristor structures have been studied in this work. For the first time, the reversible mechanisms of formation/destruction of single quantum conductors based on oxygen vacancies, which participate in processes of multiple resistive switching between low- and high-resistance states in a nanotubular dioxide layer, have been analyzed. An equivalent electrical circuit of a parallel resistor connection have been proposed and discussed to describe the observed memristive behavior of the studied layered structures.

Негізгі сөздер

nanotubular metal dioxides, zirconia nanotubes, memristors, memristive behavior, conductance quantization

Әдебиет тізімі

Yoo H., Kim M., Kim Y.-T., Lee K., Choi J. // Catalysts. 2018. V. 8. 555. https://doi.org/10.3390/catal8110555
Park J., Cimpean A., Tesler A.B., Mazare A. // Nanomaterials. 2021. V. 11. 2359. https://doi.org/10.3390/nano11092359
Bashirom N., Kian T.W., Kawamura G., Matsuda A., Razak K.A., Lockman Z. // Nanotechnology. 2018. V. 29. 375701. https://doi.org/10.1088/1361-6528/aaccbd
Huai X., Girardi L., Lu R., Gao S., Zhao Y., Ling Y., Rizzi G.A., Granozzi G., Zhang Z. // Nano Energy. 2019. V. 65. 104020. https://doi.org/10.1016/ j.nanoen.2019.104020
Ремпель А.А., Валеева А.А., Вохминцев А.С., Вайнштейн И.А. // Усп. хим. 2021. Т. 90. № 11. С. 1397–1414. https://doi.org/10.1070/RCR4991
Hazra A., Jan A., Tripathi A., Kundu S., Boppidi P.K.R., Gangopadhyay S. // IEEE Trans. Electron Devices. 2020. V. 67. P. 2197–2204. https://doi.org/10.1109/TED.2020.2983755
Vokhmintsev A., Petrenyov I., Kamalov R., Weinstein I. // Nanotechnology. 2022. V. 33. 075208. https://doi.org/10.1088/1361-6528/ac2e22
Yakushev A.A., Abel A.S., Averin A.D., Beletskaya I.P., Cheprakov A.V., Ziankou I.S., Bonneviot L., Bessmertnykh-Lemeune A. // Coord. Chem. Rev. 2022. V. 458. 214331. https://doi.org/10.1016/j.ccr.2021.214331
Beletskaya I.P., Ananikov V.P. // Chem. Rev. 2011. V. 111. P. 1596–1636. https://doi.org/10.1021/cr100347k
Yoo J., Lee K., Tighineanu A., Schmuki P. // Electrochem. Comm. 2013. V. 34. P. 177–180. https://doi.org/10.1016/j.elecom.2013.05.038
Вохминцев А.С., Вайнштейн И.А., Камалов Р.В., Дорошева И.Б. // Изв. РАН. Сер. Физ. 2014. Т. 78. № 9. С. 1176–1179. https://doi.org/10.7868/S0367676514090312
Du G., Li H., Mao Q., Ji Z. // J. Phys. D: Appl. Phys. 2016. V. 49. 445105. https://doi.org/10.1088/0022-3727/49/44/445105
Gao S., Zeng F., Chen C., Tang G., Lin Y., Zheng Z., Song C., Pan F. // Nanotechnol. 2013. V. 24. 335201. https://doi.org/10.1088/0957-4484/24/33/335201
Milano G., Aono M., Boarino L., Celano U., Hasegawa T., Kozicki M., Majumdar S., Menghini M., Miranda E., Ricciardi C., Tappertzhofen S., Terabe K., Valov I. // Adv. Mater. 2022. V. 34 № 32. 2201248. https://doi.org/10.1002/adma.202201248
Xue W., Gao S., Shang J., Yi X., Liu G., Li R.-W. // Adv. Electron. Mater. 2019. V. 5 № 9. 1800854. https://doi.org/10.1002/aelm.201800854
Kuzmenko A.B., van Heumen E., Carbone F., van der Marel D. // Phys. Rev. Lett. 2008. V. 100. 117401. https://doi.org/10.1103/PhysRevLett.100.117401
Вохминцев А.С., Камалов Р.В., Петренев И.А., Вайнштейн И.А. Способ получения нанотрубок диоксида циркония с квантовыми проводниками. Патент РФ 2758998. 2021.
Carlos E., Branquinho R., Martins R., Kiazadeh A., Fortunato E. // Adv. Mater. 2021. V. 33. 2004328. https://doi.org/10.1002/adma.202004328
Waser R., Dittmann R., Staikov G., Szot K. // Adv. Mater. 2009. V. 21. P. 2632–2663. https://doi.org/10.1002/adma.200900375
Petrenyov I.A., Kamalov R.V., Vokhmintsev A.S., Martemyanov N.A., Weinstein I.A. // J. Phys. Conf. Ser. 2018. V. 1124. 022004. https://doi.org/10.1088/1742-6596/1124/2/022004
Gryaznov A.O., Dorosheva I.B., Vokhmintsev A.S., Kamalov R.V., Weinstein I.A. Automatized complex for measuring the electrical properties of MIM structures // 2016 International Siberian Conference on Control and Communications (SIBCON), Moscow, Russia, 12–14 May, 2016. 7491772. https://doi.org/10.1109/SIBCON.2016.7491772
Chen C.-C., Say W.C., Hsieh S.-J., Diau E.W.-G. // Appl. Phys. A. 2009. V. 95. P. 889–898. https://doi.org/10.1007/s00339-009-5093-6
Zhao S., Xue J., Wang Y., Yan S. // J. Appl. Phys. 2012. V. 111. 043514. https://doi.org/10.1063/1.3682766
Lyons J.L., Janotti A., Van de Walle C.G. // Microelectron. Eng. 2011. V. 88. P. 1452–1456. https://doi.org/10.1016/j.mee.2011.03.099
Vokhmintsev A.S., Petrenyov I.A., Kamalov R.V., Karabanalov M.S., Weinstein I.A. // J. Lumin. 2022. V. 252. 119412. https://doi.org/10.1016/ j.jlumin.2022.119412