Отправить статью по E-mail Comparison of Polythophene Memistor Devices Manufactured by Layering and Centrifugal Methods
- Авторы: Prudnikov N.V.1,2, Korovin A.N.1, Emelyanov A.V.1,2, Malakhova Y.N.1,3, Demin V.A.1,2, Chvalun S.N.1, Erokhin V.V.1,4
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Учреждения:
- National Research Centre Kurchatov Institute
- Moscow Institute of Physics and Technology (National Research University)
- MIREA—Russian Technological University, Institute of Fine Chemical Technologies named after Lomonosov
- CNR-IMEM (National Research Council, Institute of Materials for Electronics and Magnetism)
- Выпуск: Том 14, № 7-8 (2019)
- Страницы: 380-384
- Раздел: Devices and Products Based on Nanomaterials and Nanotechnologies
- URL: https://journals.rcsi.science/2635-1676/article/view/220824
- DOI: https://doi.org/10.1134/S1995078019040104
- ID: 220824
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Аннотация
The main characteristics of memristive elements based on polythiophene made by Langmuir-Schaefer and spin-coating methods have been compared. The stability of the elements for more than 500 cycles of electric rewriting for both methods has been demonstrated. It has been shown that the elements made by spin-coating method have slower switching kinetics, which, presumably, is associated with relatively higher homogeneity of the film surface. This research may be useful for the development of polythiophene memristive devices with reproducible stable characteristics suitable for various applications: from memory elements to wearable and implantable electronics, and neuromorphic computing systems.
Об авторах
N. Prudnikov
National Research Centre Kurchatov Institute; Moscow Institute of Physics and Technology (National Research University)
Автор, ответственный за переписку.
Email: nikprud321@gmail.com
Россия, Moscow, 123182; Dolgoprudny, Moscow oblast, 141701
A. Korovin
National Research Centre Kurchatov Institute
Email: nikprud321@gmail.com
Россия, Moscow, 123182
A. Emelyanov
National Research Centre Kurchatov Institute; Moscow Institute of Physics and Technology (National Research University)
Email: nikprud321@gmail.com
Россия, Moscow, 123182; Dolgoprudny, Moscow oblast, 141701
Y. Malakhova
National Research Centre Kurchatov Institute; MIREA—Russian Technological University, Institute of Fine Chemical Technologies named after Lomonosov
Email: nikprud321@gmail.com
Россия, Moscow, 123182; Moscow, 119571
V. Demin
National Research Centre Kurchatov Institute; Moscow Institute of Physics and Technology (National Research University)
Email: nikprud321@gmail.com
Россия, Moscow, 123182; Dolgoprudny, Moscow oblast, 141701
S. Chvalun
National Research Centre Kurchatov Institute
Email: nikprud321@gmail.com
Россия, Moscow, 123182
V. Erokhin
National Research Centre Kurchatov Institute; CNR-IMEM (National Research Council, Institute of Materials for Electronics and Magnetism)
Email: nikprud321@gmail.com
Россия, Moscow, 123182; Parma, 43124
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