Enviar artigo por via de e-mail Comparison of Polythophene Memistor Devices Manufactured by Layering and Centrifugal Methods
- Autores: Prudnikov N.V.1,2, Korovin A.N.1, Emelyanov A.V.1,2, Malakhova Y.N.1,3, Demin V.A.1,2, Chvalun S.N.1, Erokhin V.V.1,4
-
Afiliações:
- National Research Centre Kurchatov Institute
- Moscow Institute of Physics and Technology (National Research University)
- MIREA—Russian Technological University, Institute of Fine Chemical Technologies named after Lomonosov
- CNR-IMEM (National Research Council, Institute of Materials for Electronics and Magnetism)
- Edição: Volume 14, Nº 7-8 (2019)
- Páginas: 380-384
- Seção: Devices and Products Based on Nanomaterials and Nanotechnologies
- URL: https://journals.rcsi.science/2635-1676/article/view/220824
- DOI: https://doi.org/10.1134/S1995078019040104
- ID: 220824
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
The main characteristics of memristive elements based on polythiophene made by Langmuir-Schaefer and spin-coating methods have been compared. The stability of the elements for more than 500 cycles of electric rewriting for both methods has been demonstrated. It has been shown that the elements made by spin-coating method have slower switching kinetics, which, presumably, is associated with relatively higher homogeneity of the film surface. This research may be useful for the development of polythiophene memristive devices with reproducible stable characteristics suitable for various applications: from memory elements to wearable and implantable electronics, and neuromorphic computing systems.
Sobre autores
N. Prudnikov
National Research Centre Kurchatov Institute; Moscow Institute of Physics and Technology (National Research University)
Autor responsável pela correspondência
Email: nikprud321@gmail.com
Rússia, Moscow, 123182; Dolgoprudny, Moscow oblast, 141701
A. Korovin
National Research Centre Kurchatov Institute
Email: nikprud321@gmail.com
Rússia, Moscow, 123182
A. Emelyanov
National Research Centre Kurchatov Institute; Moscow Institute of Physics and Technology (National Research University)
Email: nikprud321@gmail.com
Rússia, Moscow, 123182; Dolgoprudny, Moscow oblast, 141701
Y. Malakhova
National Research Centre Kurchatov Institute; MIREA—Russian Technological University, Institute of Fine Chemical Technologies named after Lomonosov
Email: nikprud321@gmail.com
Rússia, Moscow, 123182; Moscow, 119571
V. Demin
National Research Centre Kurchatov Institute; Moscow Institute of Physics and Technology (National Research University)
Email: nikprud321@gmail.com
Rússia, Moscow, 123182; Dolgoprudny, Moscow oblast, 141701
S. Chvalun
National Research Centre Kurchatov Institute
Email: nikprud321@gmail.com
Rússia, Moscow, 123182
V. Erokhin
National Research Centre Kurchatov Institute; CNR-IMEM (National Research Council, Institute of Materials for Electronics and Magnetism)
Email: nikprud321@gmail.com
Rússia, Moscow, 123182; Parma, 43124
Arquivos suplementares
