SYNTHESIS OF PASSIVATING STRUCTURES OF MULTILAYER THIN-FILM RESISTORS

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Abstract

Background. The relevance of this study is related to the development of radioelectronic equipment, which requires improvement of the electrical parameters of electronic components, including time and temperature stability. Materials and methods. The processes occurring in the structure of thin films leading to a change in the resistance of a thinfilmand the parameters determining the materials of thin films and their sequence are presented. Conclusions. The developed technology makes it possible to achieve values of TCR of thin-film resistors in the range ± 3 1/ °C. resistor over time are investigated. Results. The technology of synthesis of thin-film resistors with a protective coating.

About the authors

Vitaly S. Mamontov

Penza State University

Author for correspondence.
Email: kipra@pnzgu.ru

Associate professor of the sub-department of radio equipment design and production

(40 Krasnaya street, Penza, Russia)

Sergey A. Gurin

Scientific Research Institute of Electronic and Mechanical Devices

Email: teslananoel@rambler.ru

Candidate of technical sciences, head of the laboratory

(44 Karakozova street, Penza, Russia)

Maksim D. Novichkov

Penza State University; Scientific Research Institute of Electronic and Mechanical Devices

Email: novichkov1998maks@gmail.com

Postgraduate student; process engineer

(40 Krasnaya street, Penza, Russia); (44 Karakozova street, Penza, Russia)

Dmitry V. Agafonov

Penza State University; Scientific Research Institute of Electronic and Mechanical Devices

Email: dmitryagafonov@list.ru

Master degree student; design engineer

(40 Krasnaya street, Penza, Russia); (44 Karakozova street, Penza, Russia)

Kamila L. Zakirova

Penza State University

Email: Zakirovacamila@yandex.ru

Master degree student

(40 Krasnaya street, Penza, Russia)

References

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