Laser-plasma sources of ionizing radiation for simulation of radiation effects in microelectronic materials and components

I. N. Tsymbalov; K. A. Ivanov; R. V. Volkov; A. B. Savel’ev; L. S. Novikov; L. I. Galanina; N. P. Chirskaya; V. Yu. Bychenkov; A. I. Chumakov

doi:10.1134/S2075113317030248

Laser-plasma sources of ionizing radiation for simulation of radiation effects in microelectronic materials and components

Authors: Tsymbalov I.N.¹, Ivanov K.A.¹, Volkov R.V.¹, Savel’ev A.B.¹, Novikov L.S.², Galanina L.I.², Chirskaya N.P.², Bychenkov V.Y.³, Chumakov A.I.⁴
Affiliations:
1. International Laser Centre and Faculty of Physics
2. Skobeltsyn Institute of Nuclear Physics
3. Lebedev Physical Institute
4. National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Issue: Vol 8, No 3 (2017)
Pages: 359-363
Section: Effects of Energy Fluxes on Materials
URL: https://journals.rcsi.science/2075-1133/article/view/206418
DOI: https://doi.org/10.1134/S2075113317030248
ID: 206418

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Abstract

The characteristics of the X-ray and gamma pulses as well as pulsed proton fluxes induced by the action of femotsecond laser pulses (800 nm, 10¹⁸ W/cm²) on the surface of liquid gallium and solid molybdenum targets are measured. Estimated calculations show the possibility in principle of availability of these ionizing radiation sources for experimental simulation of single-event effects in advanced microelectronic components with a high degree of integration.

Keywords

laser pulse, plasma, femtosecond pulse, radiation effects, large-scale integrated circuit, spectrum, nuclear reaction, electronics, single radiation effects