Laser-plasma sources of ionizing radiation for simulation of radiation effects in microelectronic materials and components

I. N. Tsymbalov; K. A. Ivanov; R. V. Volkov; A. B. Savel’ev; L. S. Novikov; L. I. Galanina; N. P. Chirskaya; V. Yu. Bychenkov; A. I. Chumakov

doi:10.1134/S2075113317030248

Laser-plasma sources of ionizing radiation for simulation of radiation effects in microelectronic materials and components

Авторы: Tsymbalov I.¹, Ivanov K.¹, Volkov R.¹, Savel’ev A.¹, Novikov L.², Galanina L.², Chirskaya N.², Bychenkov V.³, Chumakov A.⁴
Учреждения:
1. International Laser Centre and Faculty of Physics
2. Skobeltsyn Institute of Nuclear Physics
3. Lebedev Physical Institute
4. National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Выпуск: Том 8, № 3 (2017)
Страницы: 359-363
Раздел: Effects of Energy Fluxes on Materials
URL: https://journals.rcsi.science/2075-1133/article/view/206418
DOI: https://doi.org/10.1134/S2075113317030248
ID: 206418

Цитировать

Полный текст

Открытый доступ
Доступ закрыт

Доступ предоставлен
Доступ закрыт

Только для подписчиков

Аннотация
Об авторах
Список литературы
Статистика

Аннотация

The characteristics of the X-ray and gamma pulses as well as pulsed proton fluxes induced by the action of femotsecond laser pulses (800 nm, 10¹⁸ W/cm²) on the surface of liquid gallium and solid molybdenum targets are measured. Estimated calculations show the possibility in principle of availability of these ionizing radiation sources for experimental simulation of single-event effects in advanced microelectronic components with a high degree of integration.

Ключевые слова

laser pulse, plasma, femtosecond pulse, radiation effects, large-scale integrated circuit, spectrum, nuclear reaction, electronics, single radiation effects