Properties and Potential Applications of Quasi-Two-Dimensional Molybdenum Disulfide for Nanoelectronic Elements

Abstract

Currently, the prospects for replacing traditional materials with quasi-two-dimensional compounds based on transition metal dichalcogenides are actively being studied. The quasi-two-dimensional molybdenum disulfide MoS₂, a semiconductor with a finite band gap, can be used either as a standalone material or as a part of layered heterostructures. When creating nanosized electronics elements based on such ultrathin materials, the application of an atomic layer etching technology is of key importance. In this paper, a brief description of the properties of MoS₂ monolayers in comparison with graphene and the monolayers of hexagonal boron nitride is considered. On the basis of the results of computer simulation by means of a DFT (density functional theory) method, effects caused in the MoS₂ monolayer by chlorine atoms and molecules widely used in the state-of-the-art of atomic layer etching applied to silicon materials are demonstrated.