Email this article Mathematical Model of Qualitative Properties of Exciton Diffusion Generated by Electron Probe in a Homogeneous Semiconductor Material
- Authors: Polyakov A.N.1, Smirnova A.N.2, Stepovich M.A.1, Turtin D.V.2
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Affiliations:
- Tsiolkovsky Kaluga State University
- Plekhanov Russian University of Economics, Ivanovo Branch
- Issue: Vol 39, No 2 (2018)
- Pages: 259-262
- Section: Article
- URL: https://journals.rcsi.science/1995-0802/article/view/201575
- DOI: https://doi.org/10.1134/S199508021802021X
- ID: 201575
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Abstract
The qualitative properties of the two-dimensional mathematical model of excitons diffusion excited by an electron beamin a semiconductormaterial are investigated. For the studied model proved continuous dependence of the solution from the input data. It is shown that the model can be applied to estimate the diffusion coefficient and the mobility of excitons on the results of experimental measurements. In the simulation are used parameters that are typical for gallium nitride.
About the authors
A. N. Polyakov
Tsiolkovsky Kaluga State University
Author for correspondence.
Email: andrei-polyakov@mail.ru
Russian Federation, ul. Stepana Razina 26, Kaluga, 248023
A. N. Smirnova
Plekhanov Russian University of Economics, Ivanovo Branch
Email: andrei-polyakov@mail.ru
Russian Federation, ul. Dzherzhinskogo 53, Ivanovo, 153025
M. A. Stepovich
Tsiolkovsky Kaluga State University
Email: andrei-polyakov@mail.ru
Russian Federation, ul. Stepana Razina 26, Kaluga, 248023
D. V. Turtin
Plekhanov Russian University of Economics, Ivanovo Branch
Email: andrei-polyakov@mail.ru
Russian Federation, ul. Dzherzhinskogo 53, Ivanovo, 153025
