Mathematical Model of Qualitative Properties of Exciton Diffusion Generated by Electron Probe in a Homogeneous Semiconductor Material
- Авторлар: Polyakov A.1, Smirnova A.2, Stepovich M.1, Turtin D.2
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Мекемелер:
- Tsiolkovsky Kaluga State University
- Plekhanov Russian University of Economics, Ivanovo Branch
- Шығарылым: Том 39, № 2 (2018)
- Беттер: 259-262
- Бөлім: Article
- URL: https://journals.rcsi.science/1995-0802/article/view/201575
- DOI: https://doi.org/10.1134/S199508021802021X
- ID: 201575
Дәйексөз келтіру
Аннотация
The qualitative properties of the two-dimensional mathematical model of excitons diffusion excited by an electron beamin a semiconductormaterial are investigated. For the studied model proved continuous dependence of the solution from the input data. It is shown that the model can be applied to estimate the diffusion coefficient and the mobility of excitons on the results of experimental measurements. In the simulation are used parameters that are typical for gallium nitride.
Негізгі сөздер
Авторлар туралы
A. Polyakov
Tsiolkovsky Kaluga State University
Хат алмасуға жауапты Автор.
Email: andrei-polyakov@mail.ru
Ресей, ul. Stepana Razina 26, Kaluga, 248023
A. Smirnova
Plekhanov Russian University of Economics, Ivanovo Branch
Email: andrei-polyakov@mail.ru
Ресей, ul. Dzherzhinskogo 53, Ivanovo, 153025
M. Stepovich
Tsiolkovsky Kaluga State University
Email: andrei-polyakov@mail.ru
Ресей, ul. Stepana Razina 26, Kaluga, 248023
D. Turtin
Plekhanov Russian University of Economics, Ivanovo Branch
Email: andrei-polyakov@mail.ru
Ресей, ul. Dzherzhinskogo 53, Ivanovo, 153025
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