Отправить статью по E-mail Theoretical study of the effect of temperature differential and ionizing radiation on the current–voltage characteristics of HEM transistors
- Авторы: Gudkov A.G.1, Tikhomirov V.G.2, Shub B.R.3, Vidyakin S.I.1
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Учреждения:
- Bauman Moscow State Technical University
- St. Petersburg Electrotechnical University (LETI)
- Semenov Institute of Chemical Physics
- Выпуск: Том 11, № 1 (2017)
- Страницы: 112-117
- Раздел: Influence of External Factors on the Physicochemical Transformations
- URL: https://journals.rcsi.science/1990-7931/article/view/198979
- DOI: https://doi.org/10.1134/S1990793117010225
- ID: 198979
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Аннотация
Requirements to the modeling of the effects of temperature differential and ionizing radiation on the current–voltage characteristics of high electron mobility transistors (HEMTs) were formulated. The results of modeling of the effects of temperature differential on the current–voltage characteristics of HEMTs were described. The results of analysis of the effects of ionizing radiation on the current–voltage characteristics of HEMTs were given. The results of modeling of the effects of ionizing radiation on the current–voltage characteristics of HEMTs were presented.
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Об авторах
A. Gudkov
Bauman Moscow State Technical University
Email: bmsturl@gmail.com
Россия, Moscow, 105005
V. Tikhomirov
St. Petersburg Electrotechnical University (LETI)
Email: bmsturl@gmail.com
Россия, St. Petersburg, 197376
B. Shub
Semenov Institute of Chemical Physics
Email: bmsturl@gmail.com
Россия, Moscow, 119991
S. Vidyakin
Bauman Moscow State Technical University
Автор, ответственный за переписку.
Email: bmsturl@gmail.com
Россия, Moscow, 105005
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