Мақаланы E-mail арқылы жіберу Theoretical study of the effect of temperature differential and ionizing radiation on the current–voltage characteristics of HEM transistors
- Авторлар: Gudkov A.G.1, Tikhomirov V.G.2, Shub B.R.3, Vidyakin S.I.1
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Мекемелер:
- Bauman Moscow State Technical University
- St. Petersburg Electrotechnical University (LETI)
- Semenov Institute of Chemical Physics
- Шығарылым: Том 11, № 1 (2017)
- Беттер: 112-117
- Бөлім: Influence of External Factors on the Physicochemical Transformations
- URL: https://journals.rcsi.science/1990-7931/article/view/198979
- DOI: https://doi.org/10.1134/S1990793117010225
- ID: 198979
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Аннотация
Requirements to the modeling of the effects of temperature differential and ionizing radiation on the current–voltage characteristics of high electron mobility transistors (HEMTs) were formulated. The results of modeling of the effects of temperature differential on the current–voltage characteristics of HEMTs were described. The results of analysis of the effects of ionizing radiation on the current–voltage characteristics of HEMTs were given. The results of modeling of the effects of ionizing radiation on the current–voltage characteristics of HEMTs were presented.
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Авторлар туралы
A. Gudkov
Bauman Moscow State Technical University
Email: bmsturl@gmail.com
Ресей, Moscow, 105005
V. Tikhomirov
St. Petersburg Electrotechnical University (LETI)
Email: bmsturl@gmail.com
Ресей, St. Petersburg, 197376
B. Shub
Semenov Institute of Chemical Physics
Email: bmsturl@gmail.com
Ресей, Moscow, 119991
S. Vidyakin
Bauman Moscow State Technical University
Хат алмасуға жауапты Автор.
Email: bmsturl@gmail.com
Ресей, Moscow, 105005
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