Email this article Theoretical study of the effect of temperature differential and ionizing radiation on the current–voltage characteristics of HEM transistors
- Authors: Gudkov A.G.1, Tikhomirov V.G.2, Shub B.R.3, Vidyakin S.I.1
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Affiliations:
- Bauman Moscow State Technical University
- St. Petersburg Electrotechnical University (LETI)
- Semenov Institute of Chemical Physics
- Issue: Vol 11, No 1 (2017)
- Pages: 112-117
- Section: Influence of External Factors on the Physicochemical Transformations
- URL: https://journals.rcsi.science/1990-7931/article/view/198979
- DOI: https://doi.org/10.1134/S1990793117010225
- ID: 198979
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Abstract
Requirements to the modeling of the effects of temperature differential and ionizing radiation on the current–voltage characteristics of high electron mobility transistors (HEMTs) were formulated. The results of modeling of the effects of temperature differential on the current–voltage characteristics of HEMTs were described. The results of analysis of the effects of ionizing radiation on the current–voltage characteristics of HEMTs were given. The results of modeling of the effects of ionizing radiation on the current–voltage characteristics of HEMTs were presented.
About the authors
A. G. Gudkov
Bauman Moscow State Technical University
Email: bmsturl@gmail.com
Russian Federation, Moscow, 105005
V. G. Tikhomirov
St. Petersburg Electrotechnical University (LETI)
Email: bmsturl@gmail.com
Russian Federation, St. Petersburg, 197376
B. R. Shub
Semenov Institute of Chemical Physics
Email: bmsturl@gmail.com
Russian Federation, Moscow, 119991
S. I. Vidyakin
Bauman Moscow State Technical University
Author for correspondence.
Email: bmsturl@gmail.com
Russian Federation, Moscow, 105005
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