电邮这篇文章 Theoretical study of the effect of temperature differential and ionizing radiation on the current–voltage characteristics of HEM transistors
- 作者: Gudkov A.G.1, Tikhomirov V.G.2, Shub B.R.3, Vidyakin S.I.1
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隶属关系:
- Bauman Moscow State Technical University
- St. Petersburg Electrotechnical University (LETI)
- Semenov Institute of Chemical Physics
- 期: 卷 11, 编号 1 (2017)
- 页面: 112-117
- 栏目: Influence of External Factors on the Physicochemical Transformations
- URL: https://journals.rcsi.science/1990-7931/article/view/198979
- DOI: https://doi.org/10.1134/S1990793117010225
- ID: 198979
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详细
Requirements to the modeling of the effects of temperature differential and ionizing radiation on the current–voltage characteristics of high electron mobility transistors (HEMTs) were formulated. The results of modeling of the effects of temperature differential on the current–voltage characteristics of HEMTs were described. The results of analysis of the effects of ionizing radiation on the current–voltage characteristics of HEMTs were given. The results of modeling of the effects of ionizing radiation on the current–voltage characteristics of HEMTs were presented.
作者简介
A. Gudkov
Bauman Moscow State Technical University
Email: bmsturl@gmail.com
俄罗斯联邦, Moscow, 105005
V. Tikhomirov
St. Petersburg Electrotechnical University (LETI)
Email: bmsturl@gmail.com
俄罗斯联邦, St. Petersburg, 197376
B. Shub
Semenov Institute of Chemical Physics
Email: bmsturl@gmail.com
俄罗斯联邦, Moscow, 119991
S. Vidyakin
Bauman Moscow State Technical University
编辑信件的主要联系方式.
Email: bmsturl@gmail.com
俄罗斯联邦, Moscow, 105005
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