Email this article Main Aspects of Metallization Formation in Sub-10 nm Integrated Circuit Manufacturing Technology
- Authors: Amirov I.I.1, Kupriyanov A.N.1, Naumov V.V.1, Izyumov M.O.1, Voloshin D.G.2, Kropotkin A.N.2, Lopaev D.V.2, Rakhimova T.V.2
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Affiliations:
- Yaroslavl Branch of Valiev Institute of Physics and Technology, RAS
- Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
- Issue: Vol 118, No 2 (2023): THEMED SECTION: FUNDAMENTAL PROBLEMS OF MULTILEVEL METALLIZATION SYSTEMS FOR ULTRA-LARGE INTEGRATED CIRCUITS
- Pages: 63-76
- Section: THEMED SECTION: FUNDAMENTAL SCIENTIFIC RESEARCH IN THE FIELD OF NATURAL SCIENCES
- URL: https://journals.rcsi.science/1605-8070/article/view/301132
- DOI: https://doi.org/10.22204/2410-4639-2023-118-02-63-76
- ID: 301132
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Abstract
The main results of theoretical and experimental studies of Ar/Cl2 and Ar/Cl2/O2 plasma parameters in an atomic layer etching reactor, studies of etching of Mo, W, Ru films in chlorine-containing plasma with in-situ control of the continuous etching process and cyclic atomic layer etching of the W film in fluorinated plasma are presented. The results of the ion concentration calculation obtained using the developed two-dimensional hydrodynamic plasma model of chlorine-containing plasma in the Ar discharge are in good agreement with experimental data. A strong increase in the etching rate of Mo, W in chlorine-containing plasma with an increase in ion energy was found. It is shown that the use of an in-situ reflectometric method for determining the etching rate makes it possible to control the etching process at individual stages of cyclic atomic layer etching of metals. This contributes to its faster development. The mechanism of etching of metals in chlorine-containing plasma is briefly discussed.
About the authors
Ildar I. Amirov
Yaroslavl Branch of Valiev Institute of Physics and Technology, RAS
Author for correspondence.
Email: ildamirov@yandex.ru
Russian Federation, 21 Universitetskaya Str., Yaroslavl, 150007, Russia
Aleksander N. Kupriyanov
Yaroslavl Branch of Valiev Institute of Physics and Technology, RAS
Email: shurik7777@mail.ru
Russian Federation, 21 Universitetskaya Str., Yaroslavl, 150007, Russia
Viktor V. Naumov
Yaroslavl Branch of Valiev Institute of Physics and Technology, RAS
Email: vvnau@rambler.ru
Russian Federation, 21 Universitetskaya Str., Yaroslavl, 150007, Russia
Mikhail O. Izyumov
Yaroslavl Branch of Valiev Institute of Physics and Technology, RAS
Email: mikhail-izyumov@yandex.ru
Russian Federation, 21 Universitetskaya Str., Yaroslavl, 150007, Russia
Dmitry G. Voloshin
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
Email: dvoloshin@mics.msu.ru
Russian Federation, 1-2 Leninskie Gory, GSP-1, Moscow, 119991, Russia
Andrey N. Kropotkin
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
Email: kropotkin.an14@physics.msu.ru
Russian Federation, 1-2 Leninskie Gory, GSP-1, Moscow, 119991, Russia
Dmitry V. Lopaev
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
Email: d.lopaev@gmail.com
Russian Federation, 1-2 Leninskie Gory, GSP-1, Moscow, 119991, Russia
Tatyana V. Rakhimova
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
Email: trakhimova@mics.msu.ru
Russian Federation, 1-2 Leninskie Gory, GSP-1, Moscow, 119991, Russia
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