电邮这篇文章 Origin of the electrical activity of iron atoms in vitreous arsenic selenide
- 作者: Marchenko A.V.1, Rabchanova T.Y.1, Seregin P.P.1, Zharkoi A.B.1, Bobokhuzhaev K.U.2
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隶属关系:
- Herzen Russian State Pedagogical University
- Ulugbek National University of Uzbekistan
- 期: 卷 42, 编号 3 (2016)
- 页面: 246-250
- 栏目: Article
- URL: https://journals.rcsi.science/1087-6596/article/view/215475
- DOI: https://doi.org/10.1134/S1087659616030081
- ID: 215475
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详细
Iron atoms in vitreous arsenic selenide films form single electron donor centers, while the Fermi level shifts from the middle of the band gap to the bottom of the conduction band with an increase in the iron concentration due to the filling of single electron states of the acceptor type located below the Fermi level.
作者简介
A. Marchenko
Herzen Russian State Pedagogical University
Email: ppseregin@mail.ru
俄罗斯联邦, nab. reki Moyki 48, St. Petersburg, 191186
T. Rabchanova
Herzen Russian State Pedagogical University
Email: ppseregin@mail.ru
俄罗斯联邦, nab. reki Moyki 48, St. Petersburg, 191186
P. Seregin
Herzen Russian State Pedagogical University
编辑信件的主要联系方式.
Email: ppseregin@mail.ru
俄罗斯联邦, nab. reki Moyki 48, St. Petersburg, 191186
A. Zharkoi
Herzen Russian State Pedagogical University
Email: ppseregin@mail.ru
俄罗斯联邦, nab. reki Moyki 48, St. Petersburg, 191186
K. Bobokhuzhaev
Ulugbek National University of Uzbekistan
Email: ppseregin@mail.ru
乌兹别克斯坦, Vuzgorodok 4, Alamazarskii Massiv, Tashkent, 100174
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