Origin of the electrical activity of iron atoms in vitreous arsenic selenide
- Авторлар: Marchenko A.V.1, Rabchanova T.Y.1, Seregin P.P.1, Zharkoi A.B.1, Bobokhuzhaev K.U.2
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Мекемелер:
- Herzen Russian State Pedagogical University
- Ulugbek National University of Uzbekistan
- Шығарылым: Том 42, № 3 (2016)
- Беттер: 246-250
- Бөлім: Article
- URL: https://journals.rcsi.science/1087-6596/article/view/215475
- DOI: https://doi.org/10.1134/S1087659616030081
- ID: 215475
Дәйексөз келтіру
Аннотация
Iron atoms in vitreous arsenic selenide films form single electron donor centers, while the Fermi level shifts from the middle of the band gap to the bottom of the conduction band with an increase in the iron concentration due to the filling of single electron states of the acceptor type located below the Fermi level.
Негізгі сөздер
Авторлар туралы
A. Marchenko
Herzen Russian State Pedagogical University
Email: ppseregin@mail.ru
Ресей, nab. reki Moyki 48, St. Petersburg, 191186
T. Rabchanova
Herzen Russian State Pedagogical University
Email: ppseregin@mail.ru
Ресей, nab. reki Moyki 48, St. Petersburg, 191186
P. Seregin
Herzen Russian State Pedagogical University
Хат алмасуға жауапты Автор.
Email: ppseregin@mail.ru
Ресей, nab. reki Moyki 48, St. Petersburg, 191186
A. Zharkoi
Herzen Russian State Pedagogical University
Email: ppseregin@mail.ru
Ресей, nab. reki Moyki 48, St. Petersburg, 191186
K. Bobokhuzhaev
Ulugbek National University of Uzbekistan
Email: ppseregin@mail.ru
Өзбекстан, Vuzgorodok 4, Alamazarskii Massiv, Tashkent, 100174
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