Enviar artigo por via de e-mail Origin of the electrical activity of iron atoms in vitreous arsenic selenide
- Autores: Marchenko A.V.1, Rabchanova T.Y.1, Seregin P.P.1, Zharkoi A.B.1, Bobokhuzhaev K.U.2
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Afiliações:
- Herzen Russian State Pedagogical University
- Ulugbek National University of Uzbekistan
- Edição: Volume 42, Nº 3 (2016)
- Páginas: 246-250
- Seção: Article
- URL: https://journals.rcsi.science/1087-6596/article/view/215475
- DOI: https://doi.org/10.1134/S1087659616030081
- ID: 215475
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Resumo
Iron atoms in vitreous arsenic selenide films form single electron donor centers, while the Fermi level shifts from the middle of the band gap to the bottom of the conduction band with an increase in the iron concentration due to the filling of single electron states of the acceptor type located below the Fermi level.
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Sobre autores
A. Marchenko
Herzen Russian State Pedagogical University
Email: ppseregin@mail.ru
Rússia, nab. reki Moyki 48, St. Petersburg, 191186
T. Rabchanova
Herzen Russian State Pedagogical University
Email: ppseregin@mail.ru
Rússia, nab. reki Moyki 48, St. Petersburg, 191186
P. Seregin
Herzen Russian State Pedagogical University
Autor responsável pela correspondência
Email: ppseregin@mail.ru
Rússia, nab. reki Moyki 48, St. Petersburg, 191186
A. Zharkoi
Herzen Russian State Pedagogical University
Email: ppseregin@mail.ru
Rússia, nab. reki Moyki 48, St. Petersburg, 191186
K. Bobokhuzhaev
Ulugbek National University of Uzbekistan
Email: ppseregin@mail.ru
Uzbequistão, Vuzgorodok 4, Alamazarskii Massiv, Tashkent, 100174
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