Selection of the heating method of semiconductor devices during their testing in a high-conductivity state

Abstract

Possible heating methods of power semiconductor devices during their testing in a high-conductivity state are discussed. It is shown that the diffusion capacitance of the p–n junction has a significant effect on measurements of device parameters. The effect of the diffusion capacitance on the results of testing of power semiconductor devices at various shapes of heating-current pulses was investigated. Conclusions on the possibility of using current pulses of various shapes for testing power semiconductor devices in the highconductivity state are drawn.