Single-electron states in semiconductor nanospherical layer of large radius
- Autores: Harutyunyan V.1, Hayrapetyan D.1,2, Baghdasaryan D.1
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Afiliações:
- Russian–Armenian (Slavonic) University
- Yerevan State University
- Edição: Volume 51, Nº 4 (2016)
- Páginas: 350-359
- Seção: Article
- URL: https://journals.rcsi.science/1068-3372/article/view/228153
- DOI: https://doi.org/10.3103/S1068337216040071
- ID: 228153
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Resumo
In a spherical core/shell/shell nanolayer the single-particle states were considered in the regime of strong quantizations. The relation between the geometrical dimensions of the corresponding components of a sample are chosen in such a way that the differences between the characteristics of materials form a quantum well for the charge carriers in the middle layer. The adequate approximate approaches are suggested to determine analytically the energy spectrum and the wave functions of the single-electron states in the spherical nanolayer. A comparison of the results of the analytical and the numerical calculations is performed. The interval values of the ratio between the layer thickness and its radius at which the results of proposed approximations coincide with the satisfactory accuracy with the results of numerical calculations are determined.
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Sobre autores
V. Harutyunyan
Russian–Armenian (Slavonic) University
Email: dhayrap82@gmail.com
Armênia, Yerevan
D. Hayrapetyan
Russian–Armenian (Slavonic) University; Yerevan State University
Autor responsável pela correspondência
Email: dhayrap82@gmail.com
Armênia, Yerevan; Yerevan
D. Baghdasaryan
Russian–Armenian (Slavonic) University
Email: dhayrap82@gmail.com
Armênia, Yerevan