Single-electron states in semiconductor nanospherical layer of large radius
- 作者: Harutyunyan V.1, Hayrapetyan D.1,2, Baghdasaryan D.1
-
隶属关系:
- Russian–Armenian (Slavonic) University
- Yerevan State University
- 期: 卷 51, 编号 4 (2016)
- 页面: 350-359
- 栏目: Article
- URL: https://journals.rcsi.science/1068-3372/article/view/228153
- DOI: https://doi.org/10.3103/S1068337216040071
- ID: 228153
如何引用文章
详细
In a spherical core/shell/shell nanolayer the single-particle states were considered in the regime of strong quantizations. The relation between the geometrical dimensions of the corresponding components of a sample are chosen in such a way that the differences between the characteristics of materials form a quantum well for the charge carriers in the middle layer. The adequate approximate approaches are suggested to determine analytically the energy spectrum and the wave functions of the single-electron states in the spherical nanolayer. A comparison of the results of the analytical and the numerical calculations is performed. The interval values of the ratio between the layer thickness and its radius at which the results of proposed approximations coincide with the satisfactory accuracy with the results of numerical calculations are determined.
作者简介
V. Harutyunyan
Russian–Armenian (Slavonic) University
Email: dhayrap82@gmail.com
亚美尼亚, Yerevan
D. Hayrapetyan
Russian–Armenian (Slavonic) University; Yerevan State University
编辑信件的主要联系方式.
Email: dhayrap82@gmail.com
亚美尼亚, Yerevan; Yerevan
D. Baghdasaryan
Russian–Armenian (Slavonic) University
Email: dhayrap82@gmail.com
亚美尼亚, Yerevan