Diagnostics of Radiative Processes in Semiconductors, Excited by Ultrashort High-Voltage Pulses
- Авторы: Bagramov V.G.1, Danielyan G.L.2, Nasibov A.S.1, Podvyznikov V.A.2, Tasmagulov I.D.1, Chevokin V.K.2
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Учреждения:
- Lebedev Physical Institute
- Prokhorov General Physics Institute
- Выпуск: Том 45, № 4 (2018)
- Страницы: 108-111
- Раздел: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228612
- DOI: https://doi.org/10.3103/S1068335618040036
- ID: 228612
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Аннотация
A configuration of the multichannel system for diagnostics of radiative processes in various regions of the discharge appearing in semiconductors in response to high-voltage pulses is considered. The system allows real-time recording of spectra, dynamics, and energy of radiation in nine emitting object zones 200–400 μm in diameter. The recording equipment is connected to objects under study by fiber-optic cables (FOCs). The system temporal resolution can be varied from 40 to 250 ps depending on the FOC diameter. An example of the simultaneous study of spatiotemporal characteristics of the streamer discharge at seven points of a CdSxSe1−x semiconductor wafer is given.
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Об авторах
V. Bagramov
Lebedev Physical Institute
Автор, ответственный за переписку.
Email: nas2121@mail.ru
Россия, Leninskii pr. 53, Moscow, 119991
G. Danielyan
Prokhorov General Physics Institute
Email: nas2121@mail.ru
Россия, ul. Vavilova 38, Moscow, 119991
A. Nasibov
Lebedev Physical Institute
Email: nas2121@mail.ru
Россия, Leninskii pr. 53, Moscow, 119991
V. Podvyznikov
Prokhorov General Physics Institute
Email: nas2121@mail.ru
Россия, ul. Vavilova 38, Moscow, 119991
I. Tasmagulov
Lebedev Physical Institute
Email: nas2121@mail.ru
Россия, Leninskii pr. 53, Moscow, 119991
V. Chevokin
Prokhorov General Physics Institute
Email: nas2121@mail.ru
Россия, ul. Vavilova 38, Moscow, 119991
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