Photoluminescence properties of silicon nanocrystals grown by nanosecond laser ablation of solid-state targets in an inert gas atmosphere


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Аннотация

It was found that the photoluminescence intensity decay kinetics of nanocrystalline silicon layers formed by nanosecond laser ablation of crystalline silicon targets in a helium atmosphere exhibit a power-law behavior with an exponent from 0.9 to 1.5, depending on the temperature and luminescence photon energy in the range of 1.4–1.8 eV, which indicates photoexcited carrier recombination controlled by dissipative tunneling processes in silicon nanocrystal ensembles in a suboxide matrix.

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Авторлар туралы

M. Morozov

Faculty of Physics

Email: INZavestovskaya@mephi.ru
Ресей, Moscow, 119991

I. Zavestovskaya

Lebedev Physical Institute; National Research Nuclear University “MEPhI”

Хат алмасуға жауапты Автор.
Email: INZavestovskaya@mephi.ru
Ресей, Leninskii pr. 53, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409

A. Kabashin

National Research Nuclear University “MEPhI”; Aix-Marseille University

Email: INZavestovskaya@mephi.ru
Ресей, Kashirskoe sh. 31, Moscow, 115409; Case 917, F-13288, Marseille Cedex 9, Paris

V. Timoshenko

Faculty of Physics; Lebedev Physical Institute; National Research Nuclear University “MEPhI”

Email: INZavestovskaya@mephi.ru
Ресей, Moscow, 119991; Leninskii pr. 53, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409

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