Photoluminescence properties of silicon nanocrystals grown by nanosecond laser ablation of solid-state targets in an inert gas atmosphere
- Авторлар: Morozov M.O.1, Zavestovskaya I.N.2,3, Kabashin A.V.3,4, Timoshenko V.Y.1,2,3
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Мекемелер:
- Faculty of Physics
- Lebedev Physical Institute
- National Research Nuclear University “MEPhI”
- Aix-Marseille University
- Шығарылым: Том 44, № 12 (2017)
- Беттер: 353-356
- Бөлім: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228514
- DOI: https://doi.org/10.3103/S106833561712003X
- ID: 228514
Дәйексөз келтіру
Аннотация
It was found that the photoluminescence intensity decay kinetics of nanocrystalline silicon layers formed by nanosecond laser ablation of crystalline silicon targets in a helium atmosphere exhibit a power-law behavior with an exponent from 0.9 to 1.5, depending on the temperature and luminescence photon energy in the range of 1.4–1.8 eV, which indicates photoexcited carrier recombination controlled by dissipative tunneling processes in silicon nanocrystal ensembles in a suboxide matrix.
Негізгі сөздер
Авторлар туралы
M. Morozov
Faculty of Physics
Email: INZavestovskaya@mephi.ru
Ресей, Moscow, 119991
I. Zavestovskaya
Lebedev Physical Institute; National Research Nuclear University “MEPhI”
Хат алмасуға жауапты Автор.
Email: INZavestovskaya@mephi.ru
Ресей, Leninskii pr. 53, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409
A. Kabashin
National Research Nuclear University “MEPhI”; Aix-Marseille University
Email: INZavestovskaya@mephi.ru
Ресей, Kashirskoe sh. 31, Moscow, 115409; Case 917, F-13288, Marseille Cedex 9, Paris
V. Timoshenko
Faculty of Physics; Lebedev Physical Institute; National Research Nuclear University “MEPhI”
Email: INZavestovskaya@mephi.ru
Ресей, Moscow, 119991; Leninskii pr. 53, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409
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