Отправить статью по E-mail Photoluminescence properties of silicon nanocrystals grown by nanosecond laser ablation of solid-state targets in an inert gas atmosphere
- Авторы: Morozov M.O.1, Zavestovskaya I.N.2,3, Kabashin A.V.3,4, Timoshenko V.Y.1,2,3
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Учреждения:
- Faculty of Physics
- Lebedev Physical Institute
- National Research Nuclear University “MEPhI”
- Aix-Marseille University
- Выпуск: Том 44, № 12 (2017)
- Страницы: 353-356
- Раздел: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228514
- DOI: https://doi.org/10.3103/S106833561712003X
- ID: 228514
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Аннотация
It was found that the photoluminescence intensity decay kinetics of nanocrystalline silicon layers formed by nanosecond laser ablation of crystalline silicon targets in a helium atmosphere exhibit a power-law behavior with an exponent from 0.9 to 1.5, depending on the temperature and luminescence photon energy in the range of 1.4–1.8 eV, which indicates photoexcited carrier recombination controlled by dissipative tunneling processes in silicon nanocrystal ensembles in a suboxide matrix.
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Об авторах
M. Morozov
Faculty of Physics
Email: INZavestovskaya@mephi.ru
Россия, Moscow, 119991
I. Zavestovskaya
Lebedev Physical Institute; National Research Nuclear University “MEPhI”
Автор, ответственный за переписку.
Email: INZavestovskaya@mephi.ru
Россия, Leninskii pr. 53, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409
A. Kabashin
National Research Nuclear University “MEPhI”; Aix-Marseille University
Email: INZavestovskaya@mephi.ru
Россия, Kashirskoe sh. 31, Moscow, 115409; Case 917, F-13288, Marseille Cedex 9, Paris
V. Timoshenko
Faculty of Physics; Lebedev Physical Institute; National Research Nuclear University “MEPhI”
Email: INZavestovskaya@mephi.ru
Россия, Moscow, 119991; Leninskii pr. 53, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409
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