Enviar artigo por via de e-mail Photoluminescence properties of silicon nanocrystals grown by nanosecond laser ablation of solid-state targets in an inert gas atmosphere
- Autores: Morozov M.O.1, Zavestovskaya I.N.2,3, Kabashin A.V.3,4, Timoshenko V.Y.1,2,3
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Afiliações:
- Faculty of Physics
- Lebedev Physical Institute
- National Research Nuclear University “MEPhI”
- Aix-Marseille University
- Edição: Volume 44, Nº 12 (2017)
- Páginas: 353-356
- Seção: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228514
- DOI: https://doi.org/10.3103/S106833561712003X
- ID: 228514
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Resumo
It was found that the photoluminescence intensity decay kinetics of nanocrystalline silicon layers formed by nanosecond laser ablation of crystalline silicon targets in a helium atmosphere exhibit a power-law behavior with an exponent from 0.9 to 1.5, depending on the temperature and luminescence photon energy in the range of 1.4–1.8 eV, which indicates photoexcited carrier recombination controlled by dissipative tunneling processes in silicon nanocrystal ensembles in a suboxide matrix.
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Sobre autores
M. Morozov
Faculty of Physics
Email: INZavestovskaya@mephi.ru
Rússia, Moscow, 119991
I. Zavestovskaya
Lebedev Physical Institute; National Research Nuclear University “MEPhI”
Autor responsável pela correspondência
Email: INZavestovskaya@mephi.ru
Rússia, Leninskii pr. 53, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409
A. Kabashin
National Research Nuclear University “MEPhI”; Aix-Marseille University
Email: INZavestovskaya@mephi.ru
Rússia, Kashirskoe sh. 31, Moscow, 115409; Case 917, F-13288, Marseille Cedex 9, Paris
V. Timoshenko
Faculty of Physics; Lebedev Physical Institute; National Research Nuclear University “MEPhI”
Email: INZavestovskaya@mephi.ru
Rússia, Moscow, 119991; Leninskii pr. 53, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409
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