Vortex States with Linear Electronic Spectrum in IV–VI Semiconductor Structures
- 作者: Vinogradov V.S.1
-
隶属关系:
- Lebedev Physical Institute
- 期: 卷 46, 编号 2 (2019)
- 页面: 65-69
- 栏目: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228888
- DOI: https://doi.org/10.3103/S1068335619020064
- ID: 228888
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详细
It is theoretically shown that spin-polarized vortex states with linear electronic spectrum can exist in planar homogeneous structures of two-band semiconductors at any sign of the gap parameter. These states are localized at the surface of a cylinder with a microscopic radius, have the total angular momentum of 1/2 and are stabilized when an electric voltage is applied to both sides of the planar sample.
作者简介
V. Vinogradov
Lebedev Physical Institute
编辑信件的主要联系方式.
Email: vin-ir@yandex.ru
俄罗斯联邦, Leninskii pr. 53, Moscow, 119991
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