Vortex States with Linear Electronic Spectrum in IV–VI Semiconductor Structures
- Authors: Vinogradov V.S.1
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Affiliations:
- Lebedev Physical Institute
- Issue: Vol 46, No 2 (2019)
- Pages: 65-69
- Section: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228888
- DOI: https://doi.org/10.3103/S1068335619020064
- ID: 228888
Cite item
Abstract
It is theoretically shown that spin-polarized vortex states with linear electronic spectrum can exist in planar homogeneous structures of two-band semiconductors at any sign of the gap parameter. These states are localized at the surface of a cylinder with a microscopic radius, have the total angular momentum of 1/2 and are stabilized when an electric voltage is applied to both sides of the planar sample.
About the authors
V. S. Vinogradov
Lebedev Physical Institute
Author for correspondence.
Email: vin-ir@yandex.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991
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