Vortex States with Linear Electronic Spectrum in IV–VI Semiconductor Structures


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Abstract

It is theoretically shown that spin-polarized vortex states with linear electronic spectrum can exist in planar homogeneous structures of two-band semiconductors at any sign of the gap parameter. These states are localized at the surface of a cylinder with a microscopic radius, have the total angular momentum of 1/2 and are stabilized when an electric voltage is applied to both sides of the planar sample.

About the authors

V. S. Vinogradov

Lebedev Physical Institute

Author for correspondence.
Email: vin-ir@yandex.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991

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