Effect of Laser Exposure on the Process of Silicon Nanoparticle Fabrication


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Silicon nanoparticles are obtained by nanosecond laser ablation of a single-crystal wafer under a deionized water layer. Nanoparticle generation mechanisms are studied depending on the incident energy density of laser radiation (7–12 J/cm2) and scanning speed (10–750 mm/s). At a scanning speed of 150–200 mm/s, a maximum of the extinction coefficient of obtained colloidal solutions of nanoparticles is observed, which can be caused by an increase in their mass yield.

Sobre autores

I. Saraeva

Lebedev Physical Institute

Autor responsável pela correspondência
Email: insar@lebedev.ru
Rússia, Leninskii pr. 53, Moscow, 119991

A. Ivanova

Lebedev Physical Institute; National Research Nuclear University “MEPhI”

Email: insar@lebedev.ru
Rússia, Leninskii pr. 53, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409

S. Kudryashov

Lebedev Physical Institute; National Research University of Information Technologies, Mechanics and Optics

Email: insar@lebedev.ru
Rússia, Leninskii pr. 53, Moscow, 119991; Kronverkskii pr. 49, St. Petersburg, 197101

A. Nastulyavichus

Lebedev Physical Institute

Email: insar@lebedev.ru
Rússia, Leninskii pr. 53, Moscow, 119991

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