Effect of Laser Exposure on the Process of Silicon Nanoparticle Fabrication

Аннотация

Silicon nanoparticles are obtained by nanosecond laser ablation of a single-crystal wafer under a deionized water layer. Nanoparticle generation mechanisms are studied depending on the incident energy density of laser radiation (7–12 J/cm²) and scanning speed (10–750 mm/s). At a scanning speed of 150–200 mm/s, a maximum of the extinction coefficient of obtained colloidal solutions of nanoparticles is observed, which can be caused by an increase in their mass yield.