Email this article Features of the Surface Region of the Semiconductor Structure Formed by Metal-Assisted Chemical Etching of Single-Crystal Silicon
- Authors: Melnik N.N.1, Tregulov V.V.2, Rybin N.B.3, Ivanov A.I.2
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Affiliations:
- Lebedev Physical Institute
- Ryazan State University named for S. A. Yesenin
- Ryazan State Radio Engineering University
- Issue: Vol 46, No 10 (2019)
- Pages: 324-327
- Section: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/229092
- DOI: https://doi.org/10.3103/S1068335619100063
- ID: 229092
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Abstract
The surface region of the semiconductor structure containing a porous layer formed by metal-assisted etching of a single-crystal silicon substrate is studied by scanning electron microscopy, Raman spectroscopy, and capacitance—voltage characteristic measurements. A donor-depleted layer is detected within the porous film near its outer surface.
About the authors
N. N. Melnik
Lebedev Physical Institute
Author for correspondence.
Email: melnik@sci.lebedev.ru
Russian Federation, 53 Leninskii Pr., Moscow, 119991
V. V. Tregulov
Ryazan State University named for S. A. Yesenin
Email: melnik@sci.lebedev.ru
Russian Federation, 46 Svobody St., Ryazan, 390000
N. B. Rybin
Ryazan State Radio Engineering University
Email: melnik@sci.lebedev.ru
Russian Federation, 59/1 Gagarina St., Ryazan, 390005
A. I. Ivanov
Ryazan State University named for S. A. Yesenin
Email: melnik@sci.lebedev.ru
Russian Federation, 46 Svobody St., Ryazan, 390000
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