Email this article The influence of high-temperature annealing of electrochemically deposited Cu-Zn-Sn layers on the composition and structure of kesterite films — absorbing layers of solar cells
- Authors: Rakitin V.V.1, Gapanovich M.V.1, Kolesnikova A.M.1, Sedlovets D.M.2, Bashkirov S.A.3, Hekkel V.S.3, Osakovich Y.V.3, Gremenok V.F.3, Novikov G.F.1,4
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Affiliations:
- Institute of Problems of Chemical Physics, Russian Academy of Sciences
- Iinstitute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
- State Scientific and Production Association Scientific-Practical Materials Research Centre, National Academy of Sciences of Belarus
- Faculty of Fundamental Physical and Chemical Engineering, Lomonosov Moscow State University
- Issue: Vol 68, No 6 (2019)
- Pages: 1171-1177
- Section: Full Article
- URL: https://journals.rcsi.science/1066-5285/article/view/243396
- DOI: https://doi.org/10.1007/s11172-019-2535-y
- ID: 243396
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Abstract
Cu1−δZn2−xSnxS4 (CZTS) films were prepared by sequential electrochemical deposition on different supports (Ta, Ti, Mo, and glass—Mo). The samples obtained using preliminary annealing in inert nitrogen atmosphere contained a secondary intermetallic phase Cu6Sn5 that did not disappear upon subsequent annealing in reactive sulfur atmosphere at 550 °C for 30 min. The CZTS films prepared without preliminary annealing in inert nitrogen atmosphere contained a minimum amount of secondary phases after the sulfurization step. The samples prepared were characterized by a photovoltaically suitable band gap of 1.5 eV and p-type conductivity.
About the authors
V. V. Rakitin
Institute of Problems of Chemical Physics, Russian Academy of Sciences
Email: gfnovikov@gmail.com
Russian Federation, 1 prosp. Akad. Semenova, Chernogolovka, Moscow Region, 142432
M. V. Gapanovich
Institute of Problems of Chemical Physics, Russian Academy of Sciences
Email: gfnovikov@gmail.com
Russian Federation, 1 prosp. Akad. Semenova, Chernogolovka, Moscow Region, 142432
A. M. Kolesnikova
Institute of Problems of Chemical Physics, Russian Academy of Sciences
Email: gfnovikov@gmail.com
Russian Federation, 1 prosp. Akad. Semenova, Chernogolovka, Moscow Region, 142432
D. M. Sedlovets
Iinstitute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
Email: gfnovikov@gmail.com
Russian Federation, 6 ul. Akad. Ossipyana, Chernogolovka, Moscow Region, 142432
S. A. Bashkirov
State Scientific and Production Association Scientific-Practical Materials Research Centre, National Academy of Sciences of Belarus
Email: gfnovikov@gmail.com
Belarus, 19 ul. P. Brovki, Minsk, 220072
V. S. Hekkel
State Scientific and Production Association Scientific-Practical Materials Research Centre, National Academy of Sciences of Belarus
Email: gfnovikov@gmail.com
Belarus, 19 ul. P. Brovki, Minsk, 220072
Y. V. Osakovich
State Scientific and Production Association Scientific-Practical Materials Research Centre, National Academy of Sciences of Belarus
Email: gfnovikov@gmail.com
Belarus, 19 ul. P. Brovki, Minsk, 220072
V. F. Gremenok
State Scientific and Production Association Scientific-Practical Materials Research Centre, National Academy of Sciences of Belarus
Email: gfnovikov@gmail.com
Belarus, 19 ul. P. Brovki, Minsk, 220072
G. F. Novikov
Institute of Problems of Chemical Physics, Russian Academy of Sciences; Faculty of Fundamental Physical and Chemical Engineering, Lomonosov Moscow State University
Author for correspondence.
Email: gfnovikov@gmail.com
Russian Federation, 1 prosp. Akad. Semenova, Chernogolovka, Moscow Region, 142432; 1 Leninskie Gory, Moscow, 119991
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