Analysis of Terahertz Radiation Spectra in Multilayer GaAs/AlGaAs Heterostructures


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The results of examination of the terahertz radiation spectra of multilayer GaAs/AlGaAs heterostructures synthesized on GaAs substrates are presented. The dependence of the radiation spectrum on the amplitude of the excitation current pulse and temperature dependences of the threshold lasing current and the radiation power of terahertz quantum cascade lasers with a double metallic waveguide, which were built on the basis of these structures, have been obtained. The maximum amplitude of the total radiation power is estimated at 28 μW in the range 3.25–3.32 THz at a temperature of 15 K. The spectral radiation density of the oscillator is measured. Changes in the mode content of radiation induced by the bias-current variation have been observed.

作者简介

O. Volkov

Kotel’nikov Institute of Radio Engineering and Electronics

Email: pvv@cplire.ru
俄罗斯联邦, Moscow, 125009

I. Dyuzhikov

Kotel’nikov Institute of Radio Engineering and Electronics

Email: pvv@cplire.ru
俄罗斯联邦, Moscow, 125009

M. Logunov

Kotel’nikov Institute of Radio Engineering and Electronics

Email: pvv@cplire.ru
俄罗斯联邦, Moscow, 125009

S. Nikitov

Kotel’nikov Institute of Radio Engineering and Electronics; Moscow Institute of Physics and Technology (State University)

Email: pvv@cplire.ru
俄罗斯联邦, Moscow, 125009; Dolgoprudnyi, Moscow oblast, 141701

V. Pavlovskii

Kotel’nikov Institute of Radio Engineering and Electronics

编辑信件的主要联系方式.
Email: pvv@cplire.ru
俄罗斯联邦, Moscow, 125009

N. Shchavruk

Institute of Microwave Semiconductor Electronics

Email: pvv@cplire.ru
俄罗斯联邦, Moscow, 117105

A. Pavlov

Institute of Microwave Semiconductor Electronics

Email: pvv@cplire.ru
俄罗斯联邦, Moscow, 117105

R. Khabibullin

Institute of Microwave Semiconductor Electronics

Email: pvv@cplire.ru
俄罗斯联邦, Moscow, 117105


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