Features of Tunneling Current in Superlattices with Electrical Domains
- Авторы: Paprotskiy S.K.1, Altukhov I.V.1, Kagan M.S.1, Khval’kovskiy N.A.1, Kohn I.A.1, Il’inskaya N.D.2, Usikova A.A.2, Baranov A.N.3, Teissier R.3
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Учреждения:
- Kotelnikov Institute of Radio Engineering and Electronics. Russian Academy of Sciences
- Ioffe Physical-Technical Institute, Russian Academy of Sciences
- Institute of Electronics and Systems, University of Montpellier
- Выпуск: Том 64, № 10 (2019)
- Страницы: 1140-1143
- Раздел: Nanoelectronics
- URL: https://journals.rcsi.science/1064-2269/article/view/201398
- DOI: https://doi.org/10.1134/S1064226919090158
- ID: 201398
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Аннотация
Abstract—The tunneling electron transport in GaAs/AlAs and InAs/AlSb superlattices with electric domains at room temperature is studied. At voltages above the threshold for the formation of domains, a series of maxima on the current–voltage characteristics, almost equidistant in voltage, and current hysteresis during direct and reverse voltage sweeps were found. An explanation is proposed relating the origin of these maxima to tunnel transitions between quantum wells in a triangular domain, assisted by the emission of optical phonons, and hysteresis with a transition between modes with a moving and static domain. The large asymmetry of the transition times between domain modes was found.
Об авторах
S. Paprotskiy
Kotelnikov Institute of Radio Engineering and Electronics. Russian Academy of Sciences
Автор, ответственный за переписку.
Email: paprotskiy@cplire.ru
Россия, Moscow, 125009
I. Altukhov
Kotelnikov Institute of Radio Engineering and Electronics. Russian Academy of Sciences
Email: paprotskiy@cplire.ru
Россия, Moscow, 125009
M. Kagan
Kotelnikov Institute of Radio Engineering and Electronics. Russian Academy of Sciences
Email: paprotskiy@cplire.ru
Россия, Moscow, 125009
N. Khval’kovskiy
Kotelnikov Institute of Radio Engineering and Electronics. Russian Academy of Sciences
Email: paprotskiy@cplire.ru
Россия, Moscow, 125009
I. Kohn
Kotelnikov Institute of Radio Engineering and Electronics. Russian Academy of Sciences
Email: paprotskiy@cplire.ru
Россия, Moscow, 125009
N. Il’inskaya
Ioffe Physical-Technical Institute, Russian Academy of Sciences
Email: paprotskiy@cplire.ru
Россия, St. Petersburg, 194021
A. Usikova
Ioffe Physical-Technical Institute, Russian Academy of Sciences
Email: paprotskiy@cplire.ru
Россия, St. Petersburg, 194021
A. Baranov
Institute of Electronics and Systems, University of Montpellier
Email: paprotskiy@cplire.ru
Франция, Montpellier, 34090
R. Teissier
Institute of Electronics and Systems, University of Montpellier
Email: paprotskiy@cplire.ru
Франция, Montpellier, 34090
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