Transmission Spectra of Shallow-Layered Semiconductor‒Insulator Structure
- Авторы: Fedorova I.V.1, Sementsov D.I.1
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Учреждения:
- Ulyanovsk State University
- Выпуск: Том 63, № 1 (2018)
- Страницы: 64-70
- Раздел: Radio Phenomena in Solids and Plasma
- URL: https://journals.rcsi.science/1064-2269/article/view/199418
- DOI: https://doi.org/10.1134/S1064226918010059
- ID: 199418
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Аннотация
The features of transmission spectra characterizing the layers of a shallow-layered semiconductor‒insulator medium are investigated under the action of a magnetic field. In this case, n- and p-type semiconductors are analyzed. It is demonstrated that, at H0 ≠ 0, the frequency gap, i.e., the zone eliminating wave transmission through a structure, is formed in the spectrum. In the absence of absorption near the lower zone edge (resonance frequency), the system of alternating narrow transmission and nontransmission zones concentrating with an approach to the resonance frequency is established to appear in the spectrum. It is revealed that oscillations arising near the frequency gap are smoothed with allowance for absorption in the structure.
Об авторах
I. Fedorova
Ulyanovsk State University
Email: sementsovdi@mail.ru
Россия, Ulyanovsk, 432970
D. Sementsov
Ulyanovsk State University
Автор, ответственный за переписку.
Email: sementsovdi@mail.ru
Россия, Ulyanovsk, 432970
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