Microstrip antenna–generator based on gallium arsenide

Аннотация

A design of the microstrip antenna with an epitaxial structure used as a dielectric substrate is developed. The epitaxial structure contains a thin layer of n-type gallium arsenide of on a GaAs semi-insulating substrate. The layer thickness is selected with consideration for the carrier depletion region that appears at the interface between the metal layer, which forms the antenna, and the doped semiconductor layer. We demonstrated experimentally the possibility of application of this design as a FET antenna–generator in a frequency range of 10–15 GHz.