Experimental study of burnout of microwave bipolar transistors under action of a series of electric pulses
- Авторы: Sasunkevich A.1, Sorokin L.2, Usychenko V.2
-
Учреждения:
- Mozhaiskii Military Space Academy
- Peter The Great Polytechnic University
- Выпуск: Том 61, № 7 (2016)
- Страницы: 837-845
- Раздел: Physical Processes in Electron Devices
- URL: https://journals.rcsi.science/1064-2269/article/view/197129
- DOI: https://doi.org/10.1134/S1064226916070093
- ID: 197129
Цитировать
Аннотация
Burnout of silicon transistors under the action of a periodic train of electric pulses is experimentally studied. A numerical model and a more physically demonstrative analytical model of the pulse-to-pulse heat accumulation are in qualitative and, to a certain extent, quantitative agreement with the measured results. It is demonstrated that catastrophic failure takes place at a melting point of silicon but additional heat is needed for melting of low-temperature eutectics.
Об авторах
A. Sasunkevich
Mozhaiskii Military Space Academy
Автор, ответственный за переписку.
Email: saa-soso@rambler.ru
Россия, Zhdanovskaya ul. 13, St. Petersburg, 197082
L. Sorokin
Peter The Great Polytechnic University
Email: saa-soso@rambler.ru
Россия, 29 Polytechnic street, St. Petersburg, 195251
V. Usychenko
Peter The Great Polytechnic University
Email: saa-soso@rambler.ru
Россия, 29 Polytechnic street, St. Petersburg, 195251