Multiparametric measurements of epitaxial semiconductor structures with the use of one-dimensional microwave photonic crystals

Аннотация

The possibility of measuring simultaneously the thickness of the substrate of a semiconductor structure and the thickness and conductivity of a highly doped epitaxial layer is shown in the case when the semiconductor layer plays the role of a distortion of the periodicity of a microwave photonic crystal. For measuring the mobility of free charge carriers in the highly doped epitaxial layer, a modified method of microwave magnetoresistance based on solving the inverse problem with the use of frequency dependences of the transmission and reflection coefficients measured under the action of the magnetic field in the its absence is proposed.